| \? vS15ErHo6PbI=,vS-15En-I0I‘>N3,vS15ErH06FPPbI=,vs-15ErHo6FP-N37 WwW'ViShay'C°m Vishay Semiconductors DYNAMIC REcovERY cHARAcTE Tlcs (TC 25 0C unless otherwise specified) PARAMETER TEST coNDITIoNS IF : 1 A, dIF/dt : 100 A/us, VR : 30 V IF :15 A, dIF/dt : 100 A/us, VR : 30 V Reverse recovery time Peak recovery current k:15A d|F/dt : 200 A/us VR : 390 V Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge IF : 15 A d|F/dt : 800 A/us VR : 390 V THERMAL MEcHANIcAL sPEcIFIcATIoNs PARAMETER TEST coNDITIoNS Maximum Junction and storage temperature range Thermal resistance, — junction to case (FULL_pAK) Thermal resistance, .. . . Typical socket mount Junction to ambient per leg Thermal resistance, Mounting surface, flat, Smooth case to heatsink and greased Mounting torque ' (5.0) Case Style TO-22OAC Marking device Case Style TO-220 FU LL-PAK 15ETH06FP 1000O’) ‘D A 100R < O E e .- 10 L 5 I’) S, T : 175 “C t: :1 _ J B 3 1 § § 10 TJ : 150 C U ‘IE ‘5 E 0.1_|.‘- — 0.001 5 ° % E E: 0.01 ' K 1 0 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 — Typical Forward Voltage Drop Characteristics Fig. 2 — Typical Values of Reverse Current vs. Reverse Voltage Revision: 05-Apr-12 2 Document Number: 94002 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |